SK Hynix has announced a total investment of 100 trillion won ($64.38 billion) to construct new semiconductor manufacturing facilities, including a dedicated plant for NAND flash memory.
The commitment represents a significant escalation in capital expenditure, building upon the company’s earlier disclosure of an 80 trillion won ($51.46 billion) plan for a single NAND factory.
This expanded scope underscores the firm’s strategy to secure market share in high-performance memory as artificial intelligence workloads continue to drive data center requirements.
The move reinforces SK Hynix’s position in the global memory market, where competition with Samsung Electronics remains intense.
By increasing its capital outlay, the company signals confidence in long-term pricing stability and volume growth for both DRAM and NAND products.
Investors are likely to view the expanded capex as a positive indicator of management’s outlook on semiconductor demand, particularly for high-bandwidth memory (HBM) and advanced NAND technologies critical for AI infrastructure.